The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Aug. 20, 2020
Applicant:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Inventor:
Yoshifumi Takahashi, Kyoto, JP;
Assignee:
MURATA MANUFACTURING CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03G 3/30 (2006.01); H03F 3/24 (2006.01); H03F 3/195 (2006.01);
U.S. Cl.
CPC ...
H03F 3/245 (2013.01); H03F 3/195 (2013.01); H03F 2200/211 (2013.01); H03F 2200/318 (2013.01); H03F 2200/451 (2013.01);
Abstract
A power amplifier circuit includes an amplifier unit disposed on a die of a semiconductor device. The amplifier unit includes an amplifier transistor. The power amplifier circuit further includes a detector transistor disposed on the die of the semiconductor device, a variable attenuator that compensates for a gain of the amplifier unit, a bias level setting holding unit that holds a bias level setting value, which is set based on at least a detection value of the detector transistor, and a bias generation unit that generates a bias value of the variable attenuator based on the bias level setting value.