The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Dec. 23, 2019
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Hsin-Kang Chen, Hsinchu, TW;

Jung-Jen Li, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 33/38 (2010.01); H01L 27/02 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/145 (2013.01); H01L 27/0248 (2013.01); H01L 33/0008 (2013.01); H01L 33/025 (2013.01); H01L 33/38 (2013.01);
Abstract

A semiconductor device includes a semiconductor stack having a first-type semiconductor structure, an active structure, and a second-type semiconductor structure disposed on the first-type semiconductor structure. The second-type semiconductor structure has a doping concentration. A first portion includes a part of the first-type semiconductor structure, the active structure, and the second-type semiconductor structure, and has a current confining region. A second portion includes a part of the first-type semiconductor structure, the active structure, and the second-type semiconductor structure, and includes a first-type heavily doped region in the second-type semiconductor structure. The first-type heavily doped region includes a doping concentration higher than that of the second-type semiconductor structure.


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