The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
May. 28, 2018
Applicant:
Lg Electronics Inc., Seoul, KR;
Inventors:
Seongtak Kim, Seoul, KR;
Seh-Won Ahn, Seoul, KR;
Assignee:
LG ELECTRONICS INC., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0725 (2012.01); H01L 31/0224 (2006.01); H01L 31/0236 (2006.01); H01L 31/0368 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0725 (2013.01); H01L 31/02366 (2013.01); H01L 31/022433 (2013.01); H01L 31/022466 (2013.01); H01L 31/0392 (2013.01); H01L 31/03685 (2013.01);
Abstract
The present disclosure relates to a method for manufacturing a monolithic tandem solar cell in which a perovskite solar cell is laminated and bonded on a silicon solar cell. According to the present disclosure, a first microporous precursor thin film is formed through a sputtering method on a substrate having an unevenly structured texture and then a halide thin film is formed on the first microporous precursor thin film to form a perovskite absorption layer, whereby light reflectance can be reduced and a path of light can be increased, and accordingly a light absorption rate can be increased.