The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
May. 18, 2020
Applicant:
Sunpower Corporation, San Jose, CA (US);
Inventors:
David D. Smith, Campbell, CA (US);
Tim Dennis, Canton, TX (US);
Russelle De Jesus Tabajonda, Banlic Cabuyao, PH;
Assignee:
SunPower Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/028 (2006.01); H01L 31/02 (2006.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); H01L 31/0745 (2012.01); H01L 31/0747 (2012.01); H01L 21/322 (2006.01); H01L 31/068 (2012.01); H01L 31/0368 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02008 (2013.01); H01L 21/3221 (2013.01); H01L 31/02167 (2013.01); H01L 31/022441 (2013.01); H01L 31/0368 (2013.01); H01L 31/03682 (2013.01); H01L 31/068 (2013.01); H01L 31/0745 (2013.01); H01L 31/0747 (2013.01); H01L 31/1804 (2013.01); H01L 31/186 (2013.01); H01L 31/1864 (2013.01); H01L 31/1872 (2013.01); Y02E 10/547 (2013.01); Y02P 70/50 (2015.11);
Abstract
A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.