The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Apr. 19, 2018
Nissan Motor Co., Ltd., Yokohama, JP;
Renault S.a.s., Boulogne-Billancourt, FR;
Wei Ni, Kanagawa, JP;
Toshiharu Marui, Kanagawa, JP;
Ryota Tanaka, Kanagawa, JP;
Tetsuya Hayashi, Kanagawa, JP;
Shigeharu Yamagami, Kanagawa, JP;
Keiichiro Numakura, Kanagawa, JP;
Keisuke Takemoto, Kanagawa, JP;
Yasuaki Hayami, Kanagawa, JP;
NISSAN MOTOR CO., LTD., Yokohama, JP;
RENAULT S.A.S., Boulogne-Billancourt, FR;
Abstract
A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.