The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Apr. 13, 2021
Applicant:
Murata Manufacturing Co., Ltd., Kyoto-fu, JP;
Inventors:
Assignee:
Murata Manufacturing Co., Ltd., Kyoto-fu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 21/306 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 29/0684 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/36 (2013.01); H01L 29/66318 (2013.01); H01L 21/30612 (2013.01); H01L 29/0817 (2013.01); H01L 29/205 (2013.01);
Abstract
A bipolar transistor comprising a subcollector layer, and a collector layer on the subcollector layer. The collector layer includes a plurality of doped layers. The plurality of doped layers includes a first doped layer that has a highest impurity concentration thereamong and is on a side of or in contact with the subcollector layer. Also, the first doped layer includes a portion that extends beyond at least one edge of the plurality of doped layers in a cross-sectional view.