The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Dec. 18, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Tatsuro Watahiki, Tokyo, JP;
Yohei Yuda, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
In order to provide a power semiconductor device reducing a leakage current due to a defect layer and having a small fluctuation in a threshold voltage, included are an n-type epitaxial film layer formed on a surface of the single crystal n-type semiconductor substrate and having a concave portion and a convex portion; an insulating film formed on a first region in a top portion of the convex portion; a p-type thin film layer formed on a surface of the insulating film and a surface of the n-type epitaxial film layer to form a pn junction between the p-type thin film layer and the n-type epitaxial film layer; and an anode electrode, at least part of which is formed on a surface of the p-type thin film layer and part of which passes through the p-type thin film layer and the insulating film.