The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Aug. 09, 2019
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Christof Altstaetter, Villach, AT;
Marcel Rene Mueller, Bendorf, DE;
Oliver Blank, Villach, AT;
David Laforet, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/336 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 21/28035 (2013.01); H01L 21/768 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 29/404 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract
A power semiconductor die has a semiconductor body coupled to first and second load terminals, and at least one power cell. In a horizontal cross-section of the at least one power cell, a contact has a contact region which horizontally overlaps with a field plate electrode and horizontally protrudes from the field plate trench, and a recess region does not horizontally overlap with the contact region and extends into a horizontal circumference of the field plate trench.