The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Jul. 13, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dong Chan Kim, Suwon-si, KR;

Kwan Sik Kim, Seoul, KR;

Bo Yun Kim, Hwaseong-si, KR;

Eun Sung Seo, Hwaseong-si, KR;

Il Young Yoon, Hwaseong-si, KR;

Seung Hoon Choi, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/30 (2006.01); H01L 51/44 (2006.01); H01L 31/0232 (2014.01); H01L 31/0224 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 27/14621 (2013.01); H01L 31/0232 (2013.01); H01L 31/022475 (2013.01); H01L 51/442 (2013.01);
Abstract

An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.


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