The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Mar. 18, 2019
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Chao Li, Beijing, CN;

Jianhua Du, Beijing, CN;

Feng Guan, Beijing, CN;

Zhaohui Qiang, Beijing, CN;

Zhi Wang, Beijing, CN;

Yupeng Gao, Beijing, CN;

Yang Lv, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/144 (2006.01); H01L 27/12 (2006.01); H01L 31/0352 (2006.01); H01L 31/105 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1443 (2013.01); H01L 27/1259 (2013.01); H01L 31/03529 (2013.01); H01L 31/105 (2013.01); H01L 31/18 (2013.01);
Abstract

A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.


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