The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Aug. 20, 2019
Applicants:

Beijing Boe Display Technology Co., Ltd., Beijing, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yihe Jia, Beijing, CN;

Xiangqian Ding, Beijing, CN;

Xiaoxiang Zhang, Beijing, CN;

Mingxuan Liu, Beijing, CN;

Hao Han, Beijing, CN;

Lianjie Yang, Beijing, CN;

Yongzhi Song, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 51/00 (2006.01); H01L 51/52 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01); H05K 3/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); H01L 27/1262 (2013.01); H01L 21/0276 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H01L 51/0023 (2013.01); H01L 51/5281 (2013.01); H05K 3/06 (2013.01);
Abstract

The present disclosure provides a display substrate, a method for preparing the same, and a display device. The display substrate includes: a base substrate; a metal pattern located on the base substrate, and an anti-reflection pattern located on a surface of the metal pattern proximate to the base substrate, in which a difference between a first slope angle of the anti-reflection pattern and a second slope angle of the metal pattern is less than a first threshold, and a distance between a first edge of a side surface of the anti-reflection pattern proximate to the metal pattern and a second edge of a side surface of the metal pattern proximate to the anti-reflection pattern is less than a second threshold.


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