The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
May. 28, 2019
Applicant:
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Inventor:
Chaode Mo, Shenzhen, CN;
Assignee:
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1335 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1218 (2013.01); G02F 1/1368 (2013.01); G02F 1/133502 (2013.01); H01L 27/1262 (2013.01); G02F 1/133514 (2013.01); G02F 1/136222 (2021.01); H01L 29/4908 (2013.01);
Abstract
A thin film transistor (TFT) array substrate and a display panel are provided. The TFT array substrate has a base substrate, an anti-reflection layer, and a gate electrode insulating layer. The TFT array substrate has a light-transmitting region. The anti-reflection layer is disposed on the base substrate of the light-transmitting region. The gate electrode insulating layer is disposed on the anti-reflection layer. Light refractive indexes of the base substrate, the anti-reflection layer, and the gate electrode insulating layer are increasing sequentially.