The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Aug. 22, 2019
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Seiya Sugimachi, Tokyo, JP;
Masataka Shiramizu, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/06 (2006.01); G01R 31/42 (2006.01); H01L 29/872 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); G01R 31/42 (2013.01); H01L 29/0619 (2013.01); H01L 29/872 (2013.01); H01L 22/32 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48139 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/19107 (2013.01);
Abstract
A power module includes a first MOS transistor and a first Schottky barrier diode for a lower arm, and a second MOS transistor and a second Schottky barrier diode for an upper arm. In one embodiment, one positive-side power supply terminal and one negative-side power supply terminal are provided, while an output terminal to which the first and second MOS transistors are connected and an output terminal to which the first and second Schottky barrier diodes are connected are provided as separate output terminals.