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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11251167 B1

PDFFull Text
Date of Patent:
Feb. 15, 2022

Filed:

Sep. 20, 2019

Multi-junction led with eutectic bonding and method of manufacturing the same

Applicant:

Sundiode Korea, Gwangju, KR;

Inventor:

James Chinmo Kim, San Jose, CA (US);

Assignee:

SUNDIODE KOREA;

Attorney:

Renaissance IP Law Group LLP

Primary Examiner:

Christine A Enad

Int. Cl.
CPC ...
H01L 25/075 (2006.01); H01L 23/00 (2006.01); H01L 33/06 (2010.01); H01L 33/14 (2010.01); H01L 33/24 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/62 (2010.01); C22C 5/02 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0756 (2013.01); C22C 5/02 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 33/06 (2013.01); H01L 33/14 (2013.01); H01L 33/24 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/62 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32502 (2013.01); H01L 2224/83805 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01322 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0066 (2013.01);
Abstract

Disclosed are multi-junction light emitting diode (LED) formed by using eutectic bonding and method of manufacturing the multi-junction LED. The multi-junction LED is formed by stacking a separately formed light emitting structure on another light emitting structure by using eutectic bonding. Since separately grown light emitting structure is stacked on the light emitting structure using the eutectic metal alloy bonding, it is possible to prevent crystal defects occurring between the light emitting structures when sequentially grown. Further, since the eutectic metal alloy can be formed in various patterns, it is possible to control and optimize adhesive strength, transmittance of the light generated in the upper light emitting structure, and resistance.

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