The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Jul. 15, 2016
Applicant:
Silergy Semiconductor Technology (Hangzhou) Ltd, Hangzhou, CN;
Inventor:
Chuan Peng, Hangzhou, CN;
Assignee:
Silergy Semiconductor Technology (Hangzhou) LTD, Hangzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 23/535 (2006.01); H01L 29/786 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/28052 (2013.01); H01L 29/786 (2013.01);
Abstract
A method of making a semiconductor structure can include: (i) forming a plurality of oxide layers on a semiconductor substrate; (ii) forming a plurality of conductor layers on the plurality of oxide layers; (iii) forming plurality of thickening layers on the plurality of conductor layers; (iv) patterning the plurality of conductor layers and the plurality of thickening layers to form a hard mask; and (v) implanting ion using the hard mask to form a plurality of doped regions.