The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Aug. 15, 2019
Spts Technologies Limited, Newport Gwent, GB;
Kathrine Crook, Newport Gwent, GB;
Steve Burgess, Newport Gwent, GB;
SPTS TECHNOLOGIES LIMITED, Newport, GB;
Abstract
A method is for depositing silicon nitride by plasma-enhanced chemical vapour deposition (PECVD). The method includes providing a PECVD apparatus including a chamber and a substrate support disposed within the chamber, positioning a substrate on the substrate support, introducing a nitrogen gas (N) precursor into the chamber, applying a high frequency (HF) RF power and a low frequency (LF) RF power to sustain a plasma in the chamber, introducing a silane precursor into the chamber while the HF and LF RF powers are being applied so that the silane precursor forms part of the plasma being sustained, and subsequently removing the LF RF power or reducing the LF RF power by at least 90% while continuing to sustain the plasma so that silicon nitride is deposited onto the substrate by PECVD.