The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Dec. 18, 2019
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Shairfe Muhammad Salahuddin, Leuven, BE;

Alessio Spessot, Heverlee, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02181 (2013.01); H01L 21/02233 (2013.01); H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 29/1033 (2013.01); H01L 29/4966 (2013.01); H01L 29/516 (2013.01); H01L 29/518 (2013.01); H01L 29/66575 (2013.01);
Abstract

The disclosed technology generally relates to semiconductor devices and methods of manufacturing semiconductor devices such as both logic and memory semiconductor devices. In one aspect, a semiconductor device includes a semiconductor substrate having a channel region between a source and a drain region, a gate structure arranged to control the channel region and a dielectric structure arranged between the channel region and the gate structure. The dielectric structure includes a high-k dielectric layer or a high-k ferroelectric layer and at least one two dimensional (2D) hexagonal boron-nitride (h-BN) layer in direct contact with the high-k dielectric layer or the high-k ferroelectric layer.


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