The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Feb. 28, 2020
Applicant:
Kioxia Corporation, Tokyo, JP;
Inventor:
Takaya Ogawa, Kawasaki Kanagawa, JP;
Assignee:
KIOXIA CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
According to one embodiment, a semiconductor storage device includes: a memory cell array including a memory cell transistor that is an electrically rewritable non-volatile semiconductor storage element. The memory cell transistor includes a gate electrode and a channel region adjacent the gate electrode. The semiconductor storage device includes a circuit configured to write the memory cell transistor by applying a breakdown voltage to cause dielectric breakdown between the gate electrode and the channel region.