The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Mar. 09, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jong-chul Park, Hwaseong-si, KR;
Youn-yeol Lee, Seoul, KR;
Seul-bee Lee, Hwaseong-si, KR;
Kyung-sub Lim, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/56 (2006.01); H01L 27/11582 (2017.01); G11C 16/10 (2006.01); G11C 16/12 (2006.01); G11C 16/08 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 11/5671 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/12 (2013.01); G11C 16/26 (2013.01); H01L 27/11582 (2013.01);
Abstract
An operating method of a storage device comprising a nonvolatile memory device comprising a first memory stack and a second memory stack, and a memory controller coupled to control the nonvolatile memory device, the operating method includes determining a first read voltage level with which a first memory cell of the first memory stack is successfully read, and performing a read operation on a second memory cell of the second memory stack using a second read voltage determined based on the first read voltage level.