The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Oct. 11, 2019
Applicant:

Mitsubishi Heavy Industries, Ltd., Tokyo, JP;

Inventors:

Yoshiharu Mori, Tokyo, JP;

Masaki Kusano, Tokyo, JP;

Daisuke Matsuura, Tokyo, JP;

Daisuke Kobayashi, Tokyo, JP;

Kazuyuki Hirose, Tokyo, JP;

Osamu Kawasaki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/417 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 11/417 (2013.01); G11C 29/50004 (2013.01); G11C 2029/5004 (2013.01);
Abstract

The purpose of the invention is to compensate for the radiation tolerance of a semiconductor memory. An apparatus () for compensating for radiation tolerance comprises: a voltage value acquisition unit () that acquires a data retention voltage value that is a maximum voltage value at which data is inverted when a power supply voltage of a semiconductor memory having a latch circuit is lowered; a correction value determination unit () that determines a voltage correction value on the basis of a difference between the data retention voltage value and a reference voltage value; and a voltage adjustment unit () that adjusts at least one among the power supply voltage and a substrate bias voltage by using the voltage correction value. The reference voltage value is set to be equal to or lower than the data retention voltage value that satisfies a required radiation tolerance.


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