The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Oct. 03, 2017
Applicant:
Asahi Kasei Microdevices Corporation, Tokyo, JP;
Inventors:
Toshiro Sakamoto, Tokyo, JP;
Yuukou Tsushima, Tokyo, JP;
Assignee:
Asahi Kasel Microdevices Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05F 3/24 (2006.01); G11C 16/30 (2006.01); H01L 29/792 (2006.01); H01L 29/788 (2006.01); H01L 27/11521 (2017.01); G11C 16/04 (2006.01); G11C 16/02 (2006.01); H01L 27/115 (2017.01); G11C 16/10 (2006.01); H01L 27/10 (2006.01);
U.S. Cl.
CPC ...
G05F 3/245 (2013.01); G05F 3/24 (2013.01); G11C 16/02 (2013.01); G11C 16/04 (2013.01); G11C 16/0416 (2013.01); G11C 16/10 (2013.01); G11C 16/30 (2013.01); H01L 27/10 (2013.01); H01L 27/115 (2013.01); H01L 27/11521 (2013.01); H01L 29/788 (2013.01); H01L 29/792 (2013.01);
Abstract
The object of the present invention is to provide a current source which is capable of suppressing an increase in circuit size and by which a highly accurate constant current extremely stable to manufacturing variations or temperature fluctuations can be obtained. A current source circuit is provided with a nonvolatile storage element having a control gate region and a source region and operating as a field-effect transistor, and is configured to output a current in a state where a bias is applied between the control gate region and the source region.