The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Jun. 18, 2020
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Kaname Watariguchi, Yokohama, JP;

Tomohito Ishida, Suntou-gun, JP;

Masataka Kawahara, Mishima, JP;

Michiyo Sekiya, Atami, JP;

Kohei Makisumi, Suntou-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03G 5/00 (2006.01); G03G 5/06 (2006.01); G03G 5/047 (2006.01); C09B 67/50 (2006.01); G03G 21/18 (2006.01); G03G 5/05 (2006.01);
U.S. Cl.
CPC ...
G03G 5/0696 (2013.01); C09B 67/0026 (2013.01); G03G 5/047 (2013.01); G03G 5/0525 (2013.01); G03G 21/1814 (2013.01);
Abstract

The electrophotographic photosensitive member has: a cylindrical support; a charge generating layer formed on the cylindrical support; and a charge transport layer formed on the charge generating layer, the charge generating layer contains a hydroxygallium phthalocyanine crystal having a particular CuKα characteristic X-ray diffraction peak, a titanyl phthalocyanine crystal having a particular CuKα characteristic X-ray diffraction peak or a chlorogallium phthalocyanine crystal having a particular spectral absorption spectrum as a charge generating material, and in the charge generating layer, with respect to the film thickness of the charge generating layer, when a region from the central position of an image forming area to the end position of the image forming area is divided in the axial direction of the cylindrical support into five equal regions and the average film thickness of the charge generating layer in each region satisfies a specific condition.


Find Patent Forward Citations

Loading…