The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Jun. 11, 2019
Applicant:

Rolls-royce Plc, London, GB;

Inventors:

Mohamed H. M. Sathik, Singapore, SG;

Rejeki Simanjorang, Singapore, SG;

Chandana J. Gajanayake, Singapore, SG;

Sundararajan Prasanth, Singapore, SG;

Amit K. Gupta, Singapore, SG;

Assignee:

ROLLS-ROYCE plc, London, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01K 7/00 (2006.01); G01K 3/00 (2006.01); G01K 1/00 (2006.01); G01K 7/16 (2006.01); H02P 29/60 (2016.01); G01K 7/01 (2006.01); H02P 29/024 (2016.01);
U.S. Cl.
CPC ...
G01K 7/16 (2013.01); G01K 7/01 (2013.01); H02P 29/60 (2016.02); H02P 29/024 (2013.01);
Abstract

A system, method and machine-readable instructions for monitoring a power electronics device. The system involves a semiconductor device, at least one sensor and a processor. The processor is configured to monitor a junction temperature of the semiconductor device by determining from the at least one sensor an on-state resistance of the semiconductor device and calculating the junction temperature of the semiconductor device according to a relationship between the on-state resistance of the semiconductor device and the junction temperature of the semiconductor device. The processor may apply an ageing coefficient to the on-state resistance.


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