The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Feb. 07, 2020
Applicants:

Mitsubishi Chemical Corporation, Chiyoda-ku, JP;

The University of Tokyo, Bunkyo-ku, JP;

Japan Technological Research Association of Artificial Photosynthetic Chemical Process, Chiyoda-ku, JP;

National Institute of Advanced Industrial Science and Technology, Chiyoda-ku, JP;

Inventors:

Hiroshi Nishiyama, Bunkyo-ku, JP;

Tomohiro Higashi, Bunkyo-ku, JP;

Yutaka Sasaki, Bunkyo-ku, JP;

Taro Yamada, Bunkyo-ku, JP;

Kazunari Domen, Bunkyo-ku, JP;

Yohichi Suzuki, Tsukuba, JP;

Seiji Akiyama, Chiyoda-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B 11/075 (2021.01); C01B 21/06 (2006.01); C25B 1/04 (2021.01); C25B 11/057 (2021.01); B01J 37/02 (2006.01);
U.S. Cl.
CPC ...
C25B 11/075 (2021.01); B01J 37/0215 (2013.01); C01B 21/0617 (2013.01); C25B 1/04 (2013.01); C25B 11/057 (2021.01); C01P 2006/40 (2013.01); C01P 2006/60 (2013.01);
Abstract

A method for producing a transparent electrode for oxygen production having a Ta nitride layer on a transparent substrate, including: a step of forming a Ta nitride precursor layer on the transparent substrate; and a step of nitriding the Ta nitride precursor layer with a mixed gas containing ammonia and a carrier gas.


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