The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Dec. 12, 2016
Mitsubishi Electric Corporation, Tokyo, JP;
Sho Tanaka, Tokyo, JP;
Shigeru Kusunoki, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a plurality of first transistor cells and a plurality of second transistor cells that are electrically connected in parallel between a collector electrode and an emitter electrode. A gate voltage on each of the plurality of first transistor cells is controlled by a first gate interconnection. A gate voltage on each of the plurality of second transistor cells is controlled by a second gate interconnection. A drive circuit is configured to: apply an ON-voltage of the semiconductor device to each of the first and second gate interconnections when the semiconductor device is turned on; and after a lapse of a predetermined time period since start of application of the ON-voltage, apply an OFF-voltage of the semiconductor device to the second gate interconnection and apply an ON-voltage to the first gate interconnection.