logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11245386 B1

PDFFull Text
Date of Patent:
Feb. 08, 2022

Filed:

Jan. 31, 2014

High-frequency module

Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventor:

Daisuke Tokuda, Kyoto-fu, JP;

Assignee:

Murata Manufacturing, Kyoto-fu, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Zhiyu Lu

Int. Cl.
CPC ...
H03H 11/02 (2006.01); H03H 7/01 (2006.01); H01L 23/522 (2006.01); H04B 1/04 (2006.01); H01L 23/64 (2006.01); H01L 23/66 (2006.01); H04B 1/18 (2006.01); H01L 25/16 (2006.01); H01P 1/201 (2006.01); H01Q 1/50 (2006.01); H03H 1/00 (2006.01); H03H 7/46 (2006.01);
U.S. Cl.
CPC ...
H03H 11/02 (2013.01); H01L 23/5223 (2013.01); H01L 23/5227 (2013.01); H01L 23/642 (2013.01); H01L 23/645 (2013.01); H01L 23/66 (2013.01); H01L 25/16 (2013.01); H01P 1/201 (2013.01); H01Q 1/50 (2013.01); H03H 7/0115 (2013.01); H03H 7/1708 (2013.01); H03H 7/1775 (2013.01); H04B 1/0458 (2013.01); H04B 1/18 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6644 (2013.01); H01L 2223/6672 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/30107 (2013.01); H03H 7/463 (2013.01); H03H 2001/0064 (2013.01); H03H 2001/0078 (2013.01);
Abstract

A high-frequency module includes a semiconductor chip device that is mounted on an external circuit substrate by wire bonding. A switch forming section, a power amplifier forming section and a low noise amplifier forming section, realized by a group of FETs, which are active elements, are formed in the semiconductor chip device. Flat plate electrodes, which form capacitors are formed in the semiconductor chip device. Conductor wires that connect the external circuit substrate and the semiconductor chip device function as inductors. A group of passive elements that includes inductors and capacitors is formed. As a result, a high-frequency module that can be reduced in size while still obtaining the required transmission characteristic is realized.

Find Patent Forward Citations

Loading…