The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2022

Filed:

Sep. 20, 2019
Applicant:

GM Global Technology Operations Llc, Detroit, MI (US);

Inventors:

Gayatri V. Dadheech, Bloomfield Hills, MI (US);

Brian J. Koch, Berkley, MI (US);

Alfred Zhang, Troy, MI (US);

Robert S. Conell, Sterling Heights, MI (US);

Jing Gao, Rochester, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 50/403 (2021.01); H01M 10/48 (2006.01); C23C 14/35 (2006.01); C23C 14/34 (2006.01); C23C 14/20 (2006.01); C23C 14/14 (2006.01); G01R 19/00 (2006.01); G01R 31/364 (2019.01); H01M 4/04 (2006.01); H01M 4/52 (2010.01); H01M 10/0525 (2010.01); H01M 4/66 (2006.01); C23C 14/00 (2006.01); H01M 4/134 (2010.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
H01M 4/0426 (2013.01); C23C 14/0031 (2013.01); C23C 14/35 (2013.01); H01J 37/3408 (2013.01); H01M 4/134 (2013.01); H01M 4/52 (2013.01); H01M 4/661 (2013.01); H01M 10/0525 (2013.01);
Abstract

A method of manufacturing a component for a reference electrode assembly according to various aspects of the present disclosure includes providing a separator having first and second opposing surfaces. The method further includes sputtering a first current collector layer to the first surface via magnetron or ion beam sputtering deposition. A porosity of the separator is substantially unchanged by the sputtering. In one aspect, the method further includes sputtering a second current collector layer to the second surface via magnetron or ion beam sputtering deposition. In one aspect, the first current collector layer includes nickel and defines a first thickness of greater than or equal to about 200 nm to less than or equal to about 300 nm and the second current collector layer includes gold and defines a second thickness of greater than or equal to about 25 nm to less than or equal to about 100 nm.


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