The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2022

Filed:

May. 30, 2019
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Ga-Young Ha, Icheon-si, KR;

Ki-Seon Park, Seoul, KR;

Jong-Han Shin, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 27/222 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01);
Abstract

An electronic device including a semiconductor memory. The semiconductor memory may include a variable resistance element. The variable resistance element may include a first magnetic layer formed over a first auxiliary layer, a tunnel barrier layer formed over the first magnetic layer, a second magnetic layer formed over the tunnel barrier layer, a second auxiliary layer formed over the second magnetic layer, and a hard mask formed over the second auxiliary layer. Side surfaces of the first magnetic layer may be substantially aligned with side surfaces of the first auxiliary layer, and the side surfaces of the first magnetic layer may deviate from side surfaces of the hard mask.


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