The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2022

Filed:

Nov. 28, 2019
Applicant:

Lextar Electronics Corporation, Hsinchu, TW;

Inventors:

Chang-Zhi Zhong, Hsinchu, TW;

Hung-Chia Wang, Hsinchu, TW;

Hung-Chun Tong, Hsinchu, TW;

Yu-Chun Lee, Hsinchu, TW;

Tzong-Liang Tsai, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 33/06 (2010.01); H01L 31/0216 (2014.01); C09K 11/02 (2006.01); C09K 11/77 (2006.01); C09K 11/64 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); C09K 11/02 (2013.01); C09K 11/025 (2013.01); C09K 11/64 (2013.01); C09K 11/7774 (2013.01); H01L 31/0216 (2013.01); H01L 33/06 (2013.01); H01L 33/504 (2013.01); B82Y 20/00 (2013.01); H01L 2933/0041 (2013.01);
Abstract

A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q(0Al), first configuration Q(1Al), second configuration Q(2Al), third configuration Q(3Al), and fourth configuration Q(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.


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