The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Nov. 07, 2019
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Binbin Cao, Beijing, CN;
HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD, Anhui, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
A thin film transistor () may include a substrate (); a buffer layer () on a surface of the substrate (); an active layer () on a surface of the buffer layer () opposite from the substrate (); a gate insulating layer () on a surface of the active layer () opposite from the substrate (), and a gate () on a surface of the gate insulating layer () opposite from the substrate (). A width of the active layer () may be smaller than a width of the gate (), and an orthographic projection of the gate () on the substrate () may cover an orthographic projection of the active layer () on the substrate ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile