The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Aug. 29, 2019
Applicant:
Lg Display Co., Ltd., Seoul, KR;
Inventor:
Kum-Mi Oh, Paju-si, KR;
Assignee:
LG DISPLAY CO., LTD., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/417 (2006.01); H01L 27/32 (2006.01); H01L 29/423 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/78618 (2013.01); H01L 29/78621 (2013.01); H01L 29/78672 (2013.01); H01L 27/1251 (2013.01); H01L 27/1255 (2013.01); H01L 29/78633 (2013.01);
Abstract
A thin film transistor (TFT) substrate comprises a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view.