The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2022

Filed:

May. 17, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyun Chul Sagong, Hwaseong-si, KR;

Sung Eun Kim, Hwaseong-si, KR;

Jin Woo Kim, Seoul, KR;

June Kyun Park, Seongnam-si, KR;

Sang Woo Pae, Suwon-si, KR;

Ki Hyun Choi, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 29/42368 (2013.01); H01L 29/66545 (2013.01);
Abstract

A semiconductor device may include an active region extending primarily in a first direction on a substrate. A gate structure may be disposed to intersect the active region, and extend primarily in a second direction intersecting the first direction. A gate isolation pattern may contact one end of the gate structure. The gate structure may include a plurality of portions each having different widths in the first direction, and the gate isolation pattern may have a width greater than a width of at least one of the plurality of portions of the gate structure.


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