The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Feb. 14, 2020
Kabushiki Kaisha Toshiba, Minato-ku, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
Abstract
A semiconductor device of an embodiment includes a first electrode, a second electrode, a silicon carbide layer between the first electrode and the second electrode, and the silicon carbide layer having a first plane and a second plane, the silicon carbide layer including a first trench, p-type first silicon carbide regions and n-type second silicon carbide regions alternately disposed, a p-type third silicon carbide region between the second silicon carbide region and the first plane, and an n-type fourth silicon carbide region between the third silicon carbide region and the first plane, and a p-type fifth silicon carbide region between the first silicon carbide region and the first trench, a gate electrode in the first trench, and a gate insulating layer. The length of the first silicon carbide region perpendicular to the first plane is longer than a depth of the first trench.