The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2022

Filed:

Jul. 31, 2018
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Yuichi Hashizume, Matsumoto, JP;

Keishirou Kumada, Matsumoto, JP;

Yasuyuki Hoshi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 23/532 (2006.01); H01L 23/00 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02172 (2013.01); H01L 21/02529 (2013.01); H01L 23/5329 (2013.01); H01L 24/16 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/417 (2013.01); H01L 29/41725 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/7813 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 29/0696 (2013.01); H01L 29/7397 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/051 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05018 (2013.01); H01L 2224/05027 (2013.01); H01L 2224/05559 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13023 (2013.01);
Abstract

A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor substrate of the first conductivity type; a second semiconductor layer of a second conductivity type; a first semiconductor region of the first conductivity type; and a gate electrode having a striped-shape and provided on a gate insulating film. The silicon carbide semiconductor device further includes a first electrode provided on a surface of the second semiconductor layer and the first semiconductor region; a step film provided on the first electrode; a plating film provided on the first electrode and the step film; and a solder on the plating film. The step film is provided on the first electrode on which the solder and the plating film are provided, the step film being provided so as to be embedded in grooves formed on the first electrode.


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