The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Aug. 24, 2017
Boe Technology Group Co., Ltd., Beijing, CN;
Chongqing Boe Optoelectronics Technology Co., Ltd., Chongqing, CN;
Zhonghao Huang, Beijing, CN;
Yongliang Zhao, Beijing, CN;
Jun Wang, Beijing, CN;
Yutong Yang, Beijing, CN;
Jianfei Shi, Beijing, CN;
Baosheng He, Beijing, CN;
Xu Wu, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Chongqing BOE Optoelectronics Technology Co., Ltd., Chongqing, CN;
Abstract
The present application discloses a thin film transistor. The thin film transistor includes a base substrate; an active layer; an etch stop layer on a side of the active layer distal to the base substrate; and a source electrode and a drain electrode on a side of the etch stop layer distal to the active layer. The active layer includes a channel region, a source electrode contact region, and a drain electrode contact region. An orthographic projection of the etch stop layer on the base substrate surrounds an orthographic projection of the drain electrode contact region on the base substrate. An orthographic projection of the source electrode contact region on the base substrate at least partially peripherally surrounding the orthographic projection of the etch stop layer on the base substrate.