The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2022

Filed:

Dec. 28, 2017
Applicant:

Tokuyama Corporation, Yamaguchi, JP;

Inventor:

Yuichi Inoue, Yamaguchi, JP;

Assignee:

TOKUYAMA CORPORATION, Yamaguchi, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C01B 33/03 (2006.01);
U.S. Cl.
CPC ...
C01B 33/03 (2013.01);
Abstract

Provided is a method which not only prevents (i) accumulation of fine silicon powder in a separation device and a pipe which are provided in steps after passage of a filter and (ii) damage to a pump, but also reduces adhesion of a silane oligomer to the filter. A method, in accordance with an embodiment of the present invention, for producing polycrystalline silicon, includes: a silicon deposition step; a separation step; and a fine powder removal step of removing the fine silicon powder by passing a chlorosilane condensate through a filter.


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Inoue, Yuichi. (2022). Method for producing polycrystalline silicon (U.S. Patent No. 11242253). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11242253

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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