The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Sep. 08, 2020
Texas Instruments Incorporated, Dallas, TX (US);
Xiong Li, Plano, TX (US);
Anant Kamath, Plano, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
In a power supply system, a high-side (HS) insulated-gate bipolar transistor (IGBT) has a first collector, a first gate, and a first emitter. A low-side (LS) IGBT has a second collector coupled to the first emitter, a second gate, and a second emitter. A gate drive circuit is coupled to the first gate of the HS IGBT and the second gate of the LS IGBT. A control circuit is coupled to the gate drive circuit. The control circuit is configured to control the gate drive circuit for biasing the HS IGBT to a HS saturation, and determine a HS degradation of the HS IGBT based on a HS digitized gate voltage of the HS IGBT in the HS saturation.