The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Nov. 03, 2020
Applicant:

Medtronic, Inc., Minneapolis, MN (US);

Inventors:

Jacob A. Roe, North St. Paul, MN (US);

Joel B. Artmann, Elk River, MN (US);

Jonathan P. Roberts, Coon Rapids, MN (US);

David J. Peichel, Minneapolis, MN (US);

Assignee:

Medtronic, Inc., Minneapolis, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02J 50/10 (2016.01); H02J 50/80 (2016.01); H02M 7/219 (2006.01); A61M 60/871 (2021.01); A61M 60/148 (2021.01);
U.S. Cl.
CPC ...
H02J 50/10 (2016.02); A61M 60/871 (2021.01); H02J 50/80 (2016.02); H02M 7/219 (2013.01); A61M 60/148 (2021.01); A61M 2205/8243 (2013.01);
Abstract

A digitally timed complementary metal oxide semiconductor (CMOS) rectifier for wireless power transfer in an implanted medical device is provided. According to one aspect, a voltage rectification circuit for a medical device having an internal coil and internal circuitry includes a voltage rectifier comprising a complementary metal oxide semiconductor (CMOS) circuit having low-side first type MOS transistors and upper cross-coupled second type MOS transistors. The voltage rectifier may be configured to output a rectified received voltage, each low-side first type MOS transistor being configured with an first type MOS body diode, the low-side first type MOS transistors being enabled by a timing signal to provide conduction through the low-side first type MOS transistors while bypassing conduction through the first type MOS body diode during a time window having a duration determined by voltage level crossings of the received voltage.


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