Electronic semiconducting device and method for preparing the electronic semiconducting device

Abstract

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first hole transport layer, wherein the first hole transport layer comprises (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal sate and from electrically neutral metal complexes comprising a metal cation and a at least one anion and/or at least one anionic ligand consisting of at least 4 covalently bound atoms, wherein the metal cation of the electrical p-dopant is selected from alkali metals; alkaline earth metals, Pb, Me, Fe, Co, Ni, Zn, Cd; rare earth metals in oxidation state (II) or (III); Al, Ga, In; and from Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W in oxidation state (TV) or less; provided that a) p-dopants comprising anion or anionic ligand having generic formula (Ia) or (Ib) wherein A, A, Aand Aare independently selected from CO, SOor POR; R=electron withdrawing group selected from the group comprising halide, nitrile, halogenated or perhalogenated Cto Calkyl, halogenated or perhalogenated Cto Caryl, or halogenated or perhalogenated heteroaryl with 5 to 20 ring-forming atoms; B, B, Band Bare same or independently selected from substituted or unsubstituted Cto Calkyl, substituted or unsubstituted Cto Cheteroalkyl, substituted or unsubstituted Cto Caryl, substituted or unsubstituted Cto Cheteroaryl, or Band Bform a ring; and b) p-dopants consisting of Li cation and an anion selected from perchlorate and tetrafluoroborate are excluded, and the first hole transport layer comprises a sublayer, wherein the electrical dopant is comprised in an amount, by weight and/or by volume, exceeding the total amount of other components which may additionally be comprised in the sublayer, and a method for preparing the same.