The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Jul. 16, 2018
Applicant:
Osram Oled Gmbh, Regensburg, DE;
Inventors:
Fabian Kopp, Penang, MY;
Attila Molnar, Penang, MY;
Assignee:
OSRAM OLED GMBH, Regensburg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/14 (2010.01); H01L 33/00 (2010.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01); H01L 33/005 (2013.01); H01L 33/0008 (2013.01); H01L 33/14 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01); H01L 2933/0016 (2013.01);
Abstract
An optoelectronic semiconductor chip may include a semiconductor layer sequence having at least one n-doped semiconductor layer, at least one p-doped semiconductor layer, and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. A p-terminal contact may be electrically contacted to the p-doped semiconductor layer. An n-terminal contact may be electrically contacted to the n-doped semiconductor layer. The n-terminal contact may be arranged in direct contact with the p-doped semiconductor layer at least in regions.