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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11239386 B1

PDFFull Text
Date of Patent:
Feb. 01, 2022

Filed:

Apr. 17, 2020

Optoelectronic semiconductor component

Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Karl Weidner, Munich, DE;

Ralph Wirth, Lappersdorf, DE;

Axel Kaltenbacher, Ingolstadt, DE;

Walter Wegleiter, Nittendorf, DE;

Bernd Barchmann, Regensburg, DE;

Oliver Wutz, Regensburg, DE;

Jan Marfeld, Regensburg, DE;

Assignee:

OSRAM Opto Semiconductors GmbH, Regensburg, DE;

Attorney:

DLA Piper LLP (US)

Primary Examiner:

Mouloucoulaye Inoussa

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 23/31 (2006.01); H01L 31/0232 (2014.01); H01L 33/60 (2010.01); H01L 31/0203 (2014.01); H01L 33/56 (2010.01); H01L 25/04 (2014.01); H01L 31/02 (2006.01); H01L 33/50 (2010.01); H01L 31/18 (2006.01); H01L 33/54 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0093 (2020.05); H01L 23/3107 (2013.01); H01L 23/3185 (2013.01); H01L 25/042 (2013.01); H01L 25/0753 (2013.01); H01L 31/0203 (2013.01); H01L 31/02005 (2013.01); H01L 31/0232 (2013.01); H01L 31/02322 (2013.01); H01L 31/02327 (2013.01); H01L 31/1892 (2013.01); H01L 33/483 (2013.01); H01L 33/486 (2013.01); H01L 33/502 (2013.01); H01L 33/56 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/54 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01);
Abstract

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, side areas connecting the top area and the bottom area, and epitaxially produced layers; electrical n- and p-side contacts at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the epitaxially produced layers are free from the shaped body.

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