The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Jul. 24, 2019
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Yuuichirou Hatano, Kamakura, JP;

Takahiro Shirai, Isehara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H04N 5/335 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 27/14625 (2013.01); H01L 27/14643 (2013.01); H04N 5/335 (2013.01);
Abstract

Photoelectric conversion device includes semiconductor chip including first semiconductor region, second semiconductor region arranged on the first semiconductor region, and third semiconductor region arranged on the second semiconductor region. Chip end face of the semiconductor chip is formed by the first semiconductor region, the second semiconductor region and the third semiconductor region. The first semiconductor region is of first conductivity type and the second semiconductor region is of second conductivity type. The third semiconductor region includes photoelectric conversion region, readout circuit region, and peripheral region. The peripheral region includes isolation region and outer periphery region arranged between the chip end face and the isolation region. The isolation region is of the second conductivity type and the outer periphery region is of the first conductivity type.


Find Patent Forward Citations

Loading…