The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Oct. 31, 2019
Applicant:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Inventors:
Sun Jin Yun, Daejeon, KR;
Kwang Hoon Jung, Changwon-si, KR;
So Hyun Kim, Daejeon, KR;
Jung Wook Lim, Daejeon, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 29/76 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7606 (2013.01); H01L 21/02568 (2013.01); H01L 21/02614 (2013.01); H01L 29/045 (2013.01); H01L 29/0657 (2013.01);
Abstract
Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.