The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Jan. 04, 2018
Dynex Semiconductor Limited, Lincolnshire, GB;
Zhuzhou Crrc Times Electric Co. Ltd., Hunan, CN;
Luther-King Ngwendson, Lincolnshire, GB;
Ian Deviny, Lincolnshire, GB;
John Hutchings, Lincolnshire, GB;
DYNEX SEMICONDUCTOR LIMITED, Hunan, CN;
Abstract
A gate controlled semiconductor device comprising a collector region of a first conductivity type; a drift region of a second conductivity type located over the collector region; a body region of a first conductivity type located over the drift region; at least one first contact region of a second conductivity type located above the body region and having a higher doping concentration compared to the body region. The device further comprises at least one second contact region of a first conductivity type located laterally adjacent to the at least one first contact region, the at least one second contact region having a higher doping concentration than the body region. The device further comprises at least one active trench extending from a surface into the drift region, in which the at least one first contact region adjoins the at least one active trench so that, in use, a channel region is formed along said at least one active trench and within the body region. The at least one active trench comprises: two vertical sidewalls and a bottom surface between the two vertical sidewalls; and an insulation layer along the vertical side walls and the bottom surface, wherein the insulation layer along at least one vertical side wall comprises different thicknesses; at least one auxiliary trench extending from the surface into the drift region. The at least one auxiliary trench comprises: two vertical sidewalls and a bottom surface between the two vertical sidewalls; and an insulation layer along the vertical side walls and the bottom surface, wherein the insulation layer along at least one vertical side wall comprises a constant thickness.