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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11239349 B1

PDFFull Text
Date of Patent:
Feb. 01, 2022

Filed:

Apr. 02, 2020

Method of manufacturing semiconductor device and semiconductor device

Applicant:

Sumitomo Heavy Industries, Ltd., Tokyo, JP;

Inventors:

Takaomi Suzuki, Kanagawa, JP;

Masaki Sakamoto, Kanagawa, JP;

Assignee:

SUMITOMO HEAVY INDUSTRIES, LTD., Tokyo, JP;

Attorney:

Michael Best & Friedrich LLP

Primary Examiner:

Jarrett J Stark

Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 29/739 (2006.01); H01L 21/268 (2006.01); H01L 27/07 (2006.01); B23K 26/06 (2014.01); B23K 26/354 (2014.01); B23K 26/0622 (2014.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/8249 (2006.01); B23K 26/08 (2014.01); B23K 26/00 (2014.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01); B23K 103/16 (2006.01); H01L 29/10 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); B23K 26/0006 (2013.01); B23K 26/0608 (2013.01); B23K 26/0613 (2013.01); B23K 26/0622 (2015.10); B23K 26/0853 (2013.01); B23K 26/354 (2015.10); H01L 21/268 (2013.01); H01L 21/26513 (2013.01); H01L 21/3247 (2013.01); H01L 21/8249 (2013.01); H01L 27/0727 (2013.01); H01L 29/0684 (2013.01); H01L 29/0834 (2013.01); H01L 29/6609 (2013.01); H01L 29/66136 (2013.01); H01L 29/66333 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); B23K 2101/40 (2018.08); B23K 2103/172 (2018.08); B23K 2103/50 (2018.08); B23K 2103/52 (2018.08); B23K 2103/56 (2018.08); H01L 29/1095 (2013.01); H01L 29/861 (2013.01);
Abstract

A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.

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