The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Mar. 06, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 29/08 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41766 (2013.01); H01L 21/28518 (2013.01); H01L 21/76843 (2013.01); H01L 23/53209 (2013.01); H01L 29/0847 (2013.01); H01L 29/41791 (2013.01); H01L 29/45 (2013.01); H01L 29/78 (2013.01);
Abstract
A semiconductor device including a lower contact pattern including a first metal, an upper contact pattern including a second metal, a first resistivity of first metal being greater than a second resistivity of the second metal, and a metal barrier layer between the lower contact pattern and a lower portion of the upper contact pattern, the metal barrier layer including a third metal, the third metal being different from the first and second metals may be provided. A lower width of the upper contact pattern may be less than an upper width of the lower contact pattern.