The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Oct. 24, 2019
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;
Inventors:
Qian Ma, Shenzhen, CN;
Xingyu Zhou, Shenzhen, CN;
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41733 (2013.01); H01L 29/401 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/78681 (2013.01);
Abstract
A thin film transistor substrate and a method of fabricating same are provided. The thin film transistor substrate includes a substrate, a light shielding layer disposed on the substrate, a buffer layer disposed on the light shielding layer, an active layer disposed on the buffer layer, and a gate insulating layer disposed on the active layer. The gate insulating layer includes a stacked structure including a first insulating layer and a second insulating layer.