The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Jan. 22, 2018
Applicant:

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

Inventors:

Naoto Kikuchi, Ibaraki, JP;

Yoshihiro Aiura, Ibaraki, JP;

Akane Samizo, Ibaraki, JP;

Shintarou Ikeda, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/22 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/22 (2013.01); H01L 29/04 (2013.01); H01L 29/7869 (2013.01);
Abstract

Provided are an oxide semiconductor excellent in transparency, mobility, and weatherability, etc., and a semiconductor device having the oxide semiconductor, a p-type semiconductor being realizable in the oxide semiconductor. The oxide semiconductor consists of a composite oxide, which has a crystal structure including a pyrochlore structure, containing at least one or more kinds of elements selected from Nb and Ta, and containing Sn element, and its holes become charge carriers by the condition that Sn/(Sn+Sn) which is a ratio of Snto a total amount of Sn in the composite oxide is 0.124≤Sn/(Sn+Sn)≤0.148.


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