The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Nov. 01, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sanghyun Jo, Seoul, KR;

Jaeho Lee, Seoul, KR;

Eunkyu Lee, Yongin-si, KR;

Seongjun Park, Seoul, KR;

Kiyoung Lee, Seoul, KR;

Jinseong Heo, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/074 (2012.01); H01L 31/0264 (2006.01); B82Y 15/00 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14667 (2013.01); H01L 27/14636 (2013.01); H01L 31/0264 (2013.01); H01L 31/074 (2013.01); B82Y 15/00 (2013.01);
Abstract

Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.


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