The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Jun. 25, 2020
Imec Vzw, Leuven, BE;
Katholieke Universiteit Leuven, Ku Leuven R & D, Leuven, BE;
Edward Van Sieleghem, Leuven, BE;
IMEC VZW, Leuven, BE;
Katholieke Universiteit Leuven, KU LEUVEN R&D, Leuven, BE;
Abstract
Example embodiments relate to single-photon avalanche diode detector (SPAD) arrays. One embodiment includes a SPAD array that includes a silicon substrate, a plurality of primary electrodes, and a plurality of secondary electrodes. Each of the primary electrodes includes a semiconductor material of a first doping type, extends in the silicon substrate in a first direction, and has a rotationally symmetric cross-section in a first plane perpendicular to the first direction. The plurality of secondary electrodes includes a semiconductor material of a second doping type and extends parallel to the primary electrodes in the silicon substrate. Further, the silicon substrate includes a doped upper field redistribution layer, a doped lower field redistribution layer, and a doped depletion layer arranged between the upper field redistribution layer and the lower field redistribution layer. A cross-section of each primary electrode is surrounding by one or more cross-sections of at least one neighboring secondary electrode.